Pure Wafer performs fusion bonds on wafer substrates, where two wafers are bonded together to form a single substrate with a chemical reaction caused by extreme heat. The temperature of the bond has a direct impact on the strength of the bond; the higher the heat, the stronger the bond.
There are two types of fusion bonds Pure Wafer provides; direct wafer to wafer, and wafer on insulator. During the bonding process, moisture can cause air bubbles, which can be removed by introducing the insulator to the bonding process.
Device Layer Thickness Ranges
> 300µm, 20 - 299µm, 2 - 19µm
Target Handle Layer Thickness Ranges
SEMI Standard, > 300µm, 100 - 299µm
100 - 300mm
Device Layer Tolerance
Box Thickness Ranges
0.1 - 0.9µm, 1 - 2µm