Pure Wafer’s oxidation process has been developed over decades of experience and production expertise to configure our customized diffusion furnaces.
Pure Wafer’s oxidation process has been developed over decades of experience and production expertise to configure our customized diffusion furnaces. We specializes in providing very tight tolerances on thin oxides, 100A to thick oxides, 2.5um
Utilizing low profile cantilevers, special perforated panels to facilitate cleaner operation of each run. Each lot is transferred with automated transfer equipment. These are all critical to Noel Class 100 Clean Room.
THERMAL OXIDE PROCESS (R.I. 1.46 +/-0.02)
<500A – 2KA Dry +/-10%
2KA-2.5um Wet +/-5%
WIWNU: Wafer-within-Wafer Non-Uniformity: +/-5% @ Range
| 50mm | 2 inch |
|---|---|
| 100mm | 4 inch |
| 125mm | 5 inch |
| 150mm | 6 inch |
| 200mm | 8 inch |
| 300mm | 12 inch |
One map per cassette as standard. Oxide Thickness is measured on a Noel Silicon Test Wafer with 1-50 Ohms-cm resistivity.
Please note, mixed resistivity material could result in non-uniformity.
SC1/SC2/SRD is available upon request.
