High-Uniformity Oxide Growth for Advanced Wafer Processing.
Pure Wafer provides precision thermal oxidation services for wafers from 100mm to 300mm, delivering the uniformity, control, and repeatability required for advanced semiconductor applications. Using tightly controlled horizontal furnace processes, we support both dry and wet oxidation across a broad range of oxide thicknesses.
| Capability | Specification |
|---|---|
| Wafer Diameter | 100mm to 300mm |
| Oxide Thickness Range | 500Å to 10µm |
| Target Thickness Tolerance | ±5% |
| Within-Wafer Uniformity | ±3% |
| Standard Process Temperature | 1050°C |
| Equipment | Horizontal Furnace |
| Deposition Type | Steam / Double-Side |
| Metrology | Filmetrics |
Pure Wafer uses the right oxidation method based on the target film thickness and application requirements.
| Oxide Thickness | Process Type | Best For |
|---|---|---|
| Below 1000Å | Dry Oxidation | Cleaner, denser, more controlled thin oxides |
| Above 1000Å | Wet Oxidation | Faster growth for thicker oxide layers |
For specialized applications, Pure Wafer can also develop combined dry/wet oxidation processes.
Advanced thermal oxidation performance depends on tightly managed process variables. Pure Wafer’s expertise includes control of:
In addition to oxidation, Pure Wafer offers nitrogen annealing to support downstream wafer performance and reliability.
